SЕNSORS BASED ON POLYCRYSTALLINE 3C-SiC: IMPACT OF BORON DOPING

As a chemically inert wide bandgap semiconductor material with high hardness and thermal conductivity, stable electrical characteristics, silicon carbide SiC is attractive for harsh environment electronics sensors applications. The concept of includes extremes temperature, pressure, shock loads, radiation chemical attacks those arise in aircraft automotive engines, industrial gas turbines, during oil exploration, etc.
 Lower growing temperatures polycrystalline cubic carbide, pc-3C-SiC, compared to monocrystalline allow significantly reduce its cost expand the possibilities application. It follows from previous works that sensitivity pc -3C-SiC can be increased by doping an acceptor impurity boron growth material. purpose this work determine properties pc-3C-SiC doped creation photosensors thermosensors, as well anemometers extreme operating conditions.
 shown pс-3C-SiC process causes formation acceptor-type centers band gap appearance features photosensitivity spectrum, which may practical interest photovoltaics. For T > 150K, conductivity sample increases almost exponentially activation energy 0.28 eV, close photoconductivity same sample. This indicates ionization equilibrium non-equilibrium charge carriers occurs centers. Boron broad maximum at 1.7 eV absorption region similar situation single crystal 3C-SiC.
 was determined temperature coefficient resistance boron-doped 3.0´10-2 K-1 T=300K 1.1´10-2 T=700K, order magnitude higher than thermocouples, metals anemometer threads are made. discussion obtained results allows associate value E=0.28 level shallow assume center point defect containing atom replaces 3C-SiC lattice, i.e. BSi.
 Photosensors used solar cells near-IR range 0.6 - 1.8 μm, photocells visible 0.4 μm proposed. ability conditions, low device manufacturing technology based on it, other polytypes, it considered suitable creating sensors, thermo-anemometers photosensors, detectors monitoring nuclear facilities.